Intel to premiere 3D transistors in 22-nm fab process

In downtown San Francisco earlier this morning, Intel gathered journalists for its "most significant technology announcement of the year." The news? Intel's 22-nm manufacturing process will be the first to employ 3D tri-gate transistors, resulting in substantial power savings and performance increases. Not only that, but we'll be seeing...

Source: http://techreport.com/discussions.x/20888

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